Description
Die Strahlepitaxie (Chemical Beam Epitaxy) ist eine relativ neue Methode der Herstellung von Halbleiterschichten. Hier erfahren Sie alles Wichtige rund um dieses Verfahren: Ausrstung, chemische Mechanismen, Eigenschaften verschiedener Halbleitermaterialien. Fr Interessenten aus Physik, Elektronik und Elektrotechnik. Chemical Beam Epitaxy: An Introduction (G. Davies, et al.). Growth Apparatus Design and Safety Considerations (F. Alexandre & J. Benchimol). Precursors for Chemical Beam Epitaxy (D. Bohling). Reaction Mechanisms for III-V Semiconductor Growth by Chemical Beam Epitaxy: Physical Origins of the Growth Kinetics and Film Purities Observed (J. Foord). Growth of GaAs-Based Devices by Chemical Beam Epitaxy (C. Abernathy). CBE InP-Based Materials and Devices (W. Tsang & T. Chiu). MOMBE of Antiminides and Growth Model (H. Asahi). Chemical Beam Epitaxy of Widegap II-VI Compound Semiconductors (A. Yoshikawa). Gas Source Molecular Beam Epitaxy of Silicon and Related Materials (Y. Shiraki). Gas Source Molecular Beam Epitaxy (L. Goldstein). Dopants and Dopant Incorporation (T. Whitaker & T. Martin). Selected Area Epitaxy (H. Heinecke & G. Davies). Chemical Beam Etching (W. Tsang & T. Chiu). Laser-Assisted Epitaxy (H. Sugiura). Index.
