Description
The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates. MBE-grown semiconductor interfaces.- Reflection high-energy electron diffraction (RHEED).- RHEED oscillations.- Semikinematical simulations of RHEED patterns.- Kikuchi lines.- RHEED with rotating substrates.- Reconstruction-induced phase shifts of RHEED oscillations.- Energy loss spectroscopy during growth.- Phase shifts: Models.- Applications of reconstruction-induced phase shifts.- Closing remarks.
